Tunnel magnetoresistance
Tunnel magnetoresistance (TMR) is a magnetoresistive effect that occurs in a magnetic tunnel junction (MTJ), which is a component consisting of two ferromagnets separated by a thin insulator. If the insulating layer is thin enough (typically a few nanometres), electrons can tunnel from one ferromagnet into the other. Since this process is forbidden in classical physics, the tunnel magnetoresistance is a strictly quantum mechanical phenomenon, and lies in the study of spintronics.
Tunnel magnetoresistance - Wikipedia Jump to content From Wikipedia, the free encyclopedia Magnetic effect in insulators between ferromagnets Magnetic tunnel junction (schematic) Tunnel magnetoresistance ( TMR ) is a magnetoresistive effect that occurs in a magnetic tunnel junction ( MTJ ), which is a component consisting of two ferromagnets separated by a thin insulator . If the insulating layer is thin enough (typically a few nanometres ), electrons can tunnel from one ferromagnet into the other. Since this process is forbidden in classical physics, the tunnel magnetoresistance is a strictly
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